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| Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A) 10 8 PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Battery Switch D Load Switch D Pb-free Available SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G Ordering Information: Si4410BDY Si4410BDY--T1 (with Tape and Reel) Si4410BDY--E3 (Lead (Pb)-Free) Si4410BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 10 8 50 2.3 2.5 1.6 Steady State Unit V 7.5 6 A 1.26 1.4 0.9 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72211 S-50366--Rev. C, 28-Feb-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 25 Maximum 50 90 30 Unit _C/W C/W 1 Si4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V 20 0.011 0.0165 25 0.76 1.1 0.0135 0.020 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 0.5 VDS = 15 V, VGS = 10 V, ID = 10 A 5, 0, 0 VDS = 15 V, VGS = 5 V, ID = 10 A 13 25 5.5 3.7 1.6 10 10 40 15 35 2.7 15 15 60 25 70 ns W 20 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 50 Transfer Characteristics 30 4V 20 30 20 TC = 125_C 10 25_C -55_C 0 10 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3V 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72211 S-50366--Rev. C, 28-Feb-05 2 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.030 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 C - Capacitance (pF) On-Resistance vs. Drain Current 2000 Capacitance r DS(on) - On-Resistance ( W ) 1600 Ciss 1200 800 Coss Crss 400 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 6 rDS(on) - On-Resiistance (Normalized) 8 1.6 1.2 4 0.8 2 0.4 0 0 5 10 15 20 25 0.0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 10 A I S - Source Current (A) 0.06 TJ = 25_C 0.04 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72211 S-50366--Rev. C, 28-Feb-05 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) Power (W) 0.0 -0.2 -0.4 -0.6 10 -0.8 -1.0 -50 0 10-2 ID = 250 mA 50 Single Pulse Power 40 30 TA = 25_C 20 -25 0 25 50 75 100 125 150 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 *rDS(on) Limited 10 Safe Operating Area, Junction-to-Case 100 ms, 10 ms 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s dc, 100 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72211 S-50366--Rev. C, 28-Feb-05 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72211. Document Number: 72211 S-50366--Rev. C, 28-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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